ne894m13 npn silicon transistor ? new miniature m13 package: C small transistor outline C 1.0 x 0.5 x 0.5 mm C low profle / 0.50 mm package height C flat lead style for better rf performance ? ideal for > 3 ghz oscillators ? low noise, high gain ? low c re ? uhso 25 ghz process features outline dimensions (units in mm) package outline m13 part number ne894m13 eiaj 1 registered number 2sc5787 package outline m13 symbols parameters and conditions units min typ max f t gain bandwidth at v ce = 1 v, i c = 20 ma, f = 2 ghz ghz 17 20 C |s 21e | 2 insertion power gain at v ce = 1 v, i c = 20 ma, f = 2 ghz db 11 13 C | nf noise figure at v ce = 1 v, i c = 5 ma, f = 2 ghz, z s = z opt db C 1.4 2.5 c re reverse transfer capacitance 3 at v cb = 0.5 v, i e = 0 ma, f = 1 mhz pf C 0.22 0.30 i cbo collector cutoff current at v cb = 5 v, i e = 0 na C C 100 i ebo emitter cutoff current at v eb = 1 v, i c = 0 na C C 100 h fe dc current gain 2 at v ce = 1 v, i c = 5 ma 50 C 100 electrical characteristics (t a = 25c) notes: 1. electronic industrial association of japan. 2. pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. collector to base capacitance when the emitter is grounded description nec's ne894m13 transistor is designed for oscillator applica - tions above 3 ghz. the ne894m13 features low voltage, low current operation, low noise, and high gain. nec's new low profle/fat lead style "m13" package is ideal for today's portable wireless applications. california eastern laboratories 1. emitter 2. base 3. collector pin connections 0.125 +0.1 ?0.05 0.50.05 0.1 0.1 0.2 +0.1 ?0.05 0.35 0.7 0.35 0.15 +0.1 ?0.05 0.15 +0.1 ?0.05 1.0 +0.1 ?0.05 0.5 +0.1 ?0.05 0.70.05 1 2 3 b 7 0.3 0.2 0.2 (bottom v iew)
notes: 1. operation in excess of any one of these parameters may result in permanent damage. 2. with device mounted on 1.08 cm 2 x 1.0 mm glass epoxy board. symbols parameters units ratings v cbo collector to base voltage v 9 v ceo collector to emitter voltage v 3.0 v ebo emitter to base voltage v 1.5 i c collector current ma 35 p t 2 total power dissipation mw 105 t j junction temperature c 150 t stg storage temperature c -65 to +150 absolute maximum ratings 1 (t a = 25c) ambient temperature, t a (c) total power dissipation, p tot (mw) total power dissipation vs. ambient temperature typical performance curves (t a = 25c) collector to base voltage, v cb (v) reverse transfer capacitance, c re (pf) reverse transfr capacitance vs. collector to base voltage 150 125 100 75 50 25 0 105 mounted on glass epoxy pcb (1 .0 8 cm 2 x 1. 0 mm (t) ) 0 2 5 5 0 7 5 100 125 150 0.5 0. 4 0. 3 0. 2 0. 1 0 0 2 4 6 8 1 0 f = 1 mhz ne894m13 v ce = 1 v 10 0 10 1 0. 1 0. 00 1 0. 000 1 0. 01 0. 4 0 .5 0. 6 0 .7 0. 8 0 .9 1. 0 base to emitter voltage, v be (v) collector current, i c (ma) collector current vs. base to emitter voltage 40 30 20 10 0 0 1 2 3 4 5 50 0 a 150 a 20 0 a 250 a 30 0 a 350 a 400 a 450 a 10 0 a i b = 5 00 a collector current, i c (ma) collector current vs. collector to emitter voltage collector to emitter voltage, v ce (v) part number quantity ne894m13-a 50 pcs (non reel) NE894M13-T3-A 10 kpcs/reel ordering information
typical performance curves (t a = 25c) 28 24 20 16 12 8 4 0 1 1 0 10 0 v ce = 1 v f = 2 ghz 40 35 30 25 20 15 10 5 0 0. 1 1 1 0 msg ma g |s 21 e | 2 v ce = 1 v i c = 20 ma 20 16 12 8 4 0 1 1 0 ms g ma g |s 21 e | 2 10 0 v ce = 2 v f = 2 g h z 20 16 12 8 4 0 1 1 0 msg ma g |s 21 e | 2 10 0 v ce = 2 v f = 2 g h z collector current, i c (ma) ne894m13 20 16 12 8 4 0 1 10 10 0 v ce = 1 v f = 4 ghz ms g ma g |s 21 e | 2 20 16 12 8 4 0 1 10 10 0 v ce = 2 v f = 4 ghz ms g ma g |s 21 e | 2 insertion power gain, |s 21e | 2 (db) maximum available gain, mag(db) maximum stable gain, msg(db) insertion power gain, mag, msg vs. frequency collector current, i c (ma) insertion power gain, mag, msg vs. collector current associated gain, g a (db) collector current, i c (ma) collector current, i c (ma) gain bandwidth product, f t (ghz) collector current, i c (ma) gain bandwidth product vs. collector current frequency, f (ghz) insertion power gain, |s 21e | 2 (db) maximum available gain, mag(db) maximum stable gain, msg(db) insertion power gain, mag, msg vs. collector current insertion power gain, |s 21e | 2 (db) maximum available gain, mag(db) maximum stable gain, msg(db) insertion power gain, mag, msg vs. collector current insertion power gain, |s 21e | 2 (db) maximum available gain, mag(db) maximum stable gain, msg(db) insertion power gain, mag, msg vs. collector current insertion power gain, |s 21e | 2 (db) maximum available gain, mag(db) maximum stable gain, msg(db)
ne894m13 5 4 3 2 1 0 1 10 10 0 0 4 8 12 16 20 v ce = 1 v f = 1 ghz g a nf noise figure, nf (db) noise figure, associated gain vs. collector current typical performance curves (t a = 25c) associated gain, g a (db) collector current, i c (ma) 5 4 3 2 1 0 1 10 10 0 0 4 8 12 16 20 v ce = 1 v f = 2 ghz g a nf collector current, i c (ma) associated gain, g a (db) noise figure, nf (db) noise figure, associated gain vs. collector current
ne894m13 typical scattering parameters (t a = 25c) note: 1. gain calculations: mag = |s 21 | |s 12 | k - 1 ). 2 ( k d = s 11 s 22 - s 21 s 1 2 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | d | - |s 11 | - |s 22 | 2 2 2 2 | s 12 s 21 | , mag = maximum available gain msg = maximum stable gain frequency s 11 s 21 s 12 s 22 k mag 1 ghz mag ang mag ang mag ang mag ang (db) ne894m13 v c = 1 v, i c = 5 ma 0.10 0.772 - 11.0 13.002 169.8 0.011 85.6 0.966 - 8.4 0.10 30.55 0.20 0.747 - 24.6 12.548 159.5 0.022 76.8 0.928 - 15.8 0.17 27.54 0.30 0.715 - 36.5 11.948 150.4 0.032 70.6 0.883 - 22.5 0.22 25.75 0.40 0.677 - 47.7 11.241 142.4 0.040 66.2 0.835 - 28.3 0.27 24.50 0.50 0.612 - 59.5 10.457 134.1 0.046 61.3 0.758 - 31.4 0.39 23.57 0.60 0.575 - 68.8 9.699 127.9 0.051 58.2 0.707 - 35.7 0.44 22.79 0.70 0.544 - 76.9 8.993 122.5 0.056 56.5 0.658 - 39.1 0.50 22.09 0.80 0.517 - 84.6 8.364 117.7 0.059 54.9 0.623 - 41.6 0.54 21.50 0.90 0.493 - 91.3 7.756 113.5 0.062 54.1 0.590 - 44.1 0.59 20.94 1.00 0.474 - 97.3 7.228 109.6 0.065 53.6 0.558 - 45.9 0.65 20.46 2.00 0.383 -135.0 4.155 84.4 0.088 58.8 0.411 - 59.5 1.01 16.27 3.00 0.362 -155.9 2.920 68.1 0.120 67.4 0.383 - 73.2 1.10 11.97 4.00 0.355 -175.7 2.253 54.6 0.162 72.0 0.412 - 88.5 1.05 10.08 5.00 0.352 169.2 1.821 44.0 0.215 73.4 0.476 - 98.4 0.95 9.28 6.00 0.339 158.2 1.561 36.0 0.281 72.6 0.512 -103.6 0.86 7.44 7.00 0.359 145.9 1.390 28.0 0.358 68.5 0.522 -114.0 0.81 5.89 8.00 0.394 132.7 1.251 20.9 0.438 62.5 0.523 -127.0 0.79 4.56 9.00 0.432 121.6 1.137 14.9 0.513 55.6 0.521 -142.1 0.80 3.45 10.00 0.466 110.0 1.026 10.5 0.569 48.7 0.543 -157.6 0.84 2.56 11.00 0.489 99.5 0.930 8.9 0.609 43.9 0.572 -165.7 0.87 1.84 12.00 0.489 92.9 0.878 9.3 0.653 40.4 0.567 -168.8 0.90 1.28 0.100 to 12.000 ghz by 0.050 j5 0 j2 5 j1 0 10 25 -j 10 -j 25 -j 50 -j 100 j 100 0 50 100 0 s 11 s 22 0.100 to 12.000ghz by 0.050 120 ? 90 ? 60 ? 30 ? 15 0 ? 180 ? -150 ? -120 ? -9 0 ? -6 0 ? -3 0 ? 0 ? s 12 s 21
note: 1. gain calculations: mag = |s 21 | |s 12 | k - 1 ). 2 ( k d = s 11 s 22 - s 21 s 1 2 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | d | - |s 11 | - |s 22 | 2 2 2 2 | s 12 s 21 | , mag = maximum available gain msg = maximum stable gain frequency s 11 s 21 s 12 s 22 k mag 1 ghz mag ang mag ang mag ang mag ang (db) ne894m13 v c = 1 v, i c = 20 ma 0.10 0.401 - 25.4 29.774 160.5 0.009 82.2 0.879 - 15.8 0.40 35.10 0.20 0.374 - 50.1 26.263 145.4 0.018 74.2 0.786 - 28.2 0.45 31.74 0.30 0.345 - 69.6 22.629 133.7 0.024 71.0 0.689 - 37.3 0.54 29.72 0.40 0.323 - 85.0 19.474 124.8 0.029 68.3 0.607 - 43.9 0.63 28.21 0.50 0.290 -100.7 16.742 117.7 0.034 67.8 0.506 - 46.3 0.75 26.95 0.60 0.282 -111.9 14.691 112.3 0.038 67.6 0.450 - 50.3 0.81 25.83 0.70 0.277 -119.6 13.024 108.0 0.043 68.0 0.405 - 53.1 0.86 24.84 0.80 0.274 -126.5 11.685 104.4 0.047 68.5 0.374 - 54.5 0.90 23.94 0.90 0.273 -132.5 10.574 101.2 0.051 69.0 0.349 - 56.2 0.93 23.14 1.00 0.271 -137.0 9.642 98.5 0.056 69.5 0.324 - 57.3 0.95 22.37 2.00 0.272 -162.0 5.122 80.3 0.100 72.3 0.228 - 66.9 1.06 15.65 3.00 0.275 -176.0 3.539 67.7 0.147 71.6 0.221 - 80.0 1.05 12.37 4.00 0.278 167.1 2.723 56.9 0.196 69.5 0.261 - 95.5 1.03 10.35 5.00 0.268 153.9 2.223 47.9 0.245 66.9 0.331 -101.9 0.99 9.58 6.00 0.243 146.2 1.922 40.4 0.300 64.6 0.369 -102.7 0.95 8.07 7.00 0.262 138.9 1.720 32.9 0.360 60.8 0.379 -111.1 0.91 6.80 8.00 0.300 129.8 1.565 25.9 0.421 56.4 0.384 -122.9 0.89 5.70 9.00 0.343 122.0 1.439 19.5 0.482 51.5 0.389 -136.9 0.88 4.75 10.00 0.386 112.1 1.316 13.9 0.532 46.5 0.425 -152.2 0.88 3.93 11.00 0.417 102.2 1.199 10.5 0.572 42.8 0.472 -159.8 0.88 3.21 12.00 0.423 96.7 1.123 8.8 0.617 40.2 0.488 -161.6 0.88 2.60 typical scattering parameters (t a = 25c) 0.100 to 12.000 ghz by 0.050 j5 0 j2 5 j1 0 10 25 -j 10 -j 25 -j 50 -j 100 j 100 0 50 100 0 s 11 s 22 120 ? 90 ? 60 ? 30 ? 15 0 ? 180 ? -150 ? -120 ? -9 0 ? -6 0 ? -3 0 ? 0 ? s 12 s 21 0.100 to 4.000ghz by 0.050 ne894m13
ne894m13 typical scattering parameters (t a = 25c) note: 1. gain calculations: mag = |s 21 | |s 12 | k - 1 ). 2 ( k d = s 11 s 22 - s 21 s 1 2 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | d | - |s 11 | - |s 22 | 2 2 2 2 | s 12 s 21 | , mag = maximum available gain msg = maximum stable gain frequency s 11 s 21 s 12 s 22 k mag 1 ghz mag ang mag ang mag ang mag ang (db) ne894m13 v c = 2 v, i c = 10 ma 0.10 0.634 - 14.2 21.168 166.5 0.010 85.7 0.945 - 10.0 0.19 33.43 0.20 0.601 - 30.0 19.847 154.5 0.017 75.7 0.890 - 18.5 0.28 30.64 0.30 0.559 - 43.3 18.259 144.2 0.024 70.8 0.826 - 25.6 0.36 28.79 0.40 0.515 - 55.3 16.598 135.6 0.029 67.6 0.763 - 31.2 0.43 27.51 0.50 0.451 - 67.4 14.913 127.5 0.034 64.9 0.676 - 33.5 0.56 26.40 0.60 0.417 - 77.1 13.497 121.5 0.038 63.7 0.621 - 37.1 0.62 25.49 0.70 0.391 - 84.8 12.240 116.5 0.042 63.5 0.572 - 39.6 0.68 24.65 0.80 0.369 - 92.2 11.177 112.3 0.045 63.2 0.539 - 41.3 0.73 23.93 0.90 0.351 - 98.6 10.239 108.5 0.049 63.5 0.510 - 42.9 0.78 23.24 1.00 0.337 -104.1 9.431 105.2 0.052 63.9 0.481 - 43.9 0.82 22.61 2.00 0.279 -137.6 5.194 83.8 0.084 70.4 0.363 - 52.7 1.04 16.74 3.00 0.266 -155.9 3.616 69.6 0.123 74.0 0.345 - 64.5 1.05 13.31 4.00 0.262 -175.2 2.787 57.5 0.168 74.7 0.373 - 79.7 1.00 11.92 5.00 0.255 170.3 2.259 47.6 0.217 73.9 0.439 - 89.6 0.93 10.17 6.00 0.237 161.9 1.936 39.8 0.276 72.7 0.483 - 93.7 0.86 8.47 7.00 0.259 151.8 1.731 32.0 0.344 69.3 0.499 -102.7 0.81 7.02 8.00 0.300 139.9 1.571 24.6 0.418 64.4 0.505 -114.4 0.78 5.75 9.00 0.347 129.8 1.439 17.8 0.493 58.5 0.508 -128.5 0.77 4.65 10.00 0.392 117.8 1.303 12.0 0.555 52.3 0.535 -144.5 0.78 3.71 11.00 0.425 106.1 1.170 8.7 0.600 47.5 0.573 -153.9 0.80 2.90 12.00 0.433 99.2 1.080 7.5 0.648 44.1 0.581 -157.6 0.82 2.22 0.100 to 12.000 ghz by 0.050 j5 0 j2 5 j1 0 10 25 -j 10 -j 25 -j 50 -j 100 j 100 0 50 100 0 s 11 s 22 0.100 to 12.000ghz by 0.050 120 ? 90 ? 60 ? 30 ? 15 0 ? 180 ? -150 ? -120 ? -9 0 ? -6 0 ? -3 0 ? 0 ? s 12 s 21
exclusive nor th american agent for nec rf , microw a ve & opt oelectronic semiconduct ors california eastern labora to ries ? headquarters ? 4590 patrick henry drive ? santa clara, ca 95054-1817 ? (408) 988-3500 ? te lex 34-6393 ? f ax (408) 988-0279 internet: http://www .cel.com 02/14/2007 da ta subject to change without notice ne894m13 parameters q1 parameters q1 is 137e-18 mjc 0.24 bf 129 xcjc 0.3 nf 0.9992 cjs 0 vaf 22.4 vjs 0.75 ikf 2.8 mjs 0 ise 229e-15 fc 0.55 ne 2.5 tf 5e-12 br 81.7 xtf 0.05 nr 0.9944 vtf 0.5 var 1.9 itf 0.005 ikr 0.018 ptf 0 isc 227e-18 tr 1.0e-9 nc 1.17 eg 1.11 re 0.75 xtb 0 rb 5 xti 3 rbm 3 kf 117e-15 irb 0.005 af 1.34 rc 6 cje 0.68e-12 vje 0.92 mje 0.26 cjc 0.16e-12 vjc 0.64 (1) gummel-poon model schematic parameters ne894m13 c cb 0.01 pf c ce 0.4 pf l b 0.3 nh l e 0.42 nh c cbpkg 0.05 pf c cepkg 0.05 pf l bx 0.05 nh l cx 0.05 nh l ex 0.05 nh additional parameters model test conditions frequency: 0.1 to 10 ghz bias: v ce = 0.5 v to 2 v, i c = 0.5 ma to 20 ma date: 11/2001 bjt nonlinear model parameters (1) base emitter collecto r l bpkg 0.05 nh l b 0.3 nh l epkg 0.05 nh l e 0.42 nh l cpkg 0.05 nh c cbpkg 0.05 pf c cb 0.01 pf c ce 0.4 pf c cepkg 0.05 pf q 1 nonlinear model
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